IPB11N03LA
- Manufacturer’s Part#:IPB11N03LA
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- ECAD Model:
- Description:MOSFET N-CH 25V 30A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3230
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- Available: 3230
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IPB11N03LA
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count4
- Published2006
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusDiscontinued
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating30A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 20μA
- Voltage - Rated DC25V
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max52W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs11.2m Ω @ 30A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
- Avalanche Energy Rating (Eas)80 mJ
- Continuous Drain Current (ID)30A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0112Ohm
- Pulsed Drain Current-Max (IDM)210A
- Input Capacitance (Ciss) (Max) @ Vds1358pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C30A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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