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IPB120P04P4L03ATMA1

  • In Stock: 5000000
  • Available: 74051

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.59800US $4.60
10+US $4.13820US $41.38
30+US $3.21860US $96.56
100+US $2.64385US $264.39
500+US $2.52890US $1264.45
1000+US $2.29900US $2299.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IPB120P04P4L03ATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Height
    4.7mm
  • FET Type
    P-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Cut Tape (CT)
  • Published
    2011
  • Rise Time
    16ns
  • Vgs (Max)
    ±16V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Not For New Designs
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    57 ns
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    136W
  • Terminal Position
    SINGLE
  • Threshold Voltage
    -1.7V
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    21 ns
  • Vgs(th) (Max) @ Id
    2.2V @ 340μA
  • Turn-Off Delay Time
    85 ns
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    136W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    3.1m Ω @ 100A, 10V
  • Max Dual Supply Voltage
    -40V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    234nC @ 10V
  • Gate to Source Voltage (Vgs)
    16V
  • Avalanche Energy Rating (Eas)
    78 mJ
  • Continuous Drain Current (ID)
    -120A
  • Max Junction Temperature (Tj)
    175°C
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    40V
  • Drain-source On Resistance-Max
    0.0052Ohm
  • Pulsed Drain Current-Max (IDM)
    480A
  • Drain to Source Breakdown Voltage
    -40V
  • Input Capacitance (Ciss) (Max) @ Vds
    15000pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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