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IPB407N30NATMA1

  • In Stock: 19740
  • Available: 19740

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $8.69200US $8.69
10+US $7.82280US $78.23
30+US $6.08440US $182.53
100+US $4.99790US $499.79
500+US $4.78060US $2390.30
1000+US $4.34600US $4346.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IPB407N30NATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Height
    4.7mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Factory Lead Time
    13 Weeks
  • Terminal Position
    SINGLE
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    16 ns
  • Vgs(th) (Max) @ Id
    4V @ 270μA
  • Turn-Off Delay Time
    43 ns
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    300W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    40.7m Ω @ 44A, 10V
  • Max Dual Supply Voltage
    300V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    87nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    240 mJ
  • Continuous Drain Current (ID)
    44A
  • Max Junction Temperature (Tj)
    175°C
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.0407Ohm
  • Drain to Source Breakdown Voltage
    300V
  • Input Capacitance (Ciss) (Max) @ Vds
    7180pF @ 100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    44A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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