IPD20N03L G
- Manufacturer’s Part#:IPD20N03L G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- ECAD Model:
- Description:MOSFET N-CH 30V 30A DPAK
- Datasheet:
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- In Stock: 2351
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- Available: 2351
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IPD20N03L G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count4
- Published2001
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 25μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max42W Tc
- Reach Compliance Codecompliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs20m Ω @ 15A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30V
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)30A
- Gate Charge (Qg) (Max) @ Vgs19nC @ 5V
- Avalanche Energy Rating (Eas)15 mJ
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.031Ohm
- Pulsed Drain Current-Max (IDM)120A
- Input Capacitance (Ciss) (Max) @ Vds695pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C30A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- Moisture Sensitivity Level (MSL)3 (168 Hours)
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