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IPD60R1K5CEATMA1

  • In Stock: 3609
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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IPD60R1K5CEATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    CoolMOS™ CE
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Weight
    3.949996g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • Rise Time
    7ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Discontinued
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    20 ns
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    8 ns
  • Vgs(th) (Max) @ Id
    3.5V @ 90μA
  • Turn-Off Delay Time
    40 ns
  • Element Configuration
    Single
  • Operating Temperature
    -40°C~150°C TJ
  • Power Dissipation-Max
    28W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    1.5 Ω @ 1.1A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    5A
  • Gate Charge (Qg) (Max) @ Vgs
    9.4nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    26 mJ
  • Continuous Drain Current (ID)
    3.1A
  • Pulsed Drain Current-Max (IDM)
    8A
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance (Ciss) (Max) @ Vds
    200pF @ 100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)

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