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IPD60R650CEATMA1

  • In Stock: 3256
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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IPD60R650CEATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    CoolMOS™ CE
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Weight
    3.949996g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • Rise Time
    8ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    11 ns
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    10 ns
  • Vgs(th) (Max) @ Id
    3.5V @ 200μA
  • Turn-Off Delay Time
    58 ns
  • Element Configuration
    Single
  • Operating Temperature
    -40°C~150°C TJ
  • Power Dissipation-Max
    63W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    650m Ω @ 2.4A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    600V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    20.5nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    7A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    600V
  • Drain-source On Resistance-Max
    0.65Ohm
  • Input Capacitance (Ciss) (Max) @ Vds
    440pF @ 100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    7A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PSSO-G2
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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