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IPI045N10N3GXK

  • In Stock: 3650
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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IPI045N10N3GXK
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™ 3
  • ECCN
    EAR99
  • FET Type
    N-Channel
  • Packaging
    Tube
  • Pin Count
    3
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Through Hole
  • Surface Mount
    NO
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    3.5V @ 150μA
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    214W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    4.5m Ω @ 100A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    100V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    100A
  • Gate Charge (Qg) (Max) @ Vgs
    117nC @ 10V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    100V
  • Drain-source On Resistance-Max
    0.0045Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • Input Capacitance (Ciss) (Max) @ Vds
    8410pF @ 50V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Current - Continuous Drain (Id) @ 25°C
    137A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)

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