IPP084N06L3GHKSA1
- Manufacturer’s Part#:IPP084N06L3GHKSA1
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- Sub-Categories:
- Series:OptiMOS™
- ECAD Model:
- Description:MOSFET N-CH 60V 50A TO220-3
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- In Stock: 3028
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- Available: 3028
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IPP084N06L3GHKSA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountThrough Hole
- Width4.57mm
- Height15.95mm
- Length10.36mm
- FET TypeN-Channel
- PackagingTube
- Published2011
- Rise Time26ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Fall Time (Typ)7 ns
- Power Dissipation79W
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Turn On Delay Time15 ns
- Vgs(th) (Max) @ Id2.2V @ 34μA
- Turn-Off Delay Time37 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max79W Tc
- Reach Compliance Codeunknown
- Number of Terminations3
- Rds On (Max) @ Id, Vgs8.4m Ω @ 50A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60V
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs29nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)50A
- Drain to Source Voltage (Vdss)60V
- Drain-source On Resistance-Max0.0084Ohm
- Pulsed Drain Current-Max (IDM)200A
- Input Capacitance (Ciss) (Max) @ Vds4900pF @ 30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C50A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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