IPP60R299CP

The IPP60R299CP is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power electronics, including motor control, power supplies, and DC-DC converters.

Key Features:

1. Voltage Rating: The IPP60R299CP has a maximum drain-source voltage (V_DS) of 600 volts, allowing it to handle high-voltage applications effectively.

2. Current Rating: It can support a continuous drain current (I_D) of up to 30 amperes, which provides flexibility in various power applications.

3. R_DS(on): One of the standout features of this MOSFET is its low on-resistance (R_DS(on)), which is typically around 0.299 ohms at a gate-source voltage (V_GS) of 10 volts. This low resistance minimizes power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2 to 4 volts, which allows for easy interfacing with low-voltage control circuits.

5. Package Type: The IPP60R299CP is housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on heatsinks, facilitating effective heat dissipation.

6. Thermal Characteristics: With a maximum junction temperature (T_j) of 175 degrees Celsius, this MOSFET is designed to operate reliably under high-temperature conditions, making it suitable for demanding environments.

7. Switching Performance: The device exhibits fast switching capabilities, which is essential for applications that require rapid on-off control, such as in pulse-width modulation (PWM) circuits.

8. Applications: The IPP60R299CP is ideal for use in various applications, including:

   • Power supplies (AC-DC and DC-DC converters)
   • Motor drivers and controllers
   • Lighting control systems
   • Battery management systems
   • Industrial automation

Electrical Characteristics:

• Input Capacitance (C_iss): Typically around 1,200 pF, which influences the switching speed and drive requirements.
• Output Capacitance (C_oss): Approximately 200 pF, affecting the overall efficiency during switching transitions.
• Reverse Recovery Time (t_rr): This parameter is critical for applications involving inductive loads, as it impacts the efficiency and thermal performance during switching.

Conclusion:

The IPP60R299CP from Infineon Technologies is a robust and efficient N-channel MOSFET that combines high voltage and current ratings with low on-resistance and excellent thermal performance. Its versatility makes it a popular choice for engineers and designers looking to implement reliable power management solutions in a wide range of electronic applications.