IPW60R045CPAFKSA1
- Manufacturer’s Part#:IPW60R045CPAFKSA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Automotive, AEC-Q101, CoolMOS™
- ECAD Model:
- Description:MOSFET N-CH 650V 60A TO-247
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 6980
- Available: 6365
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $34.12620 | US $34.13 |
10+ | US $25.59465 | US $255.95 |
30+ | US $22.18203 | US $665.46 |
100+ | US $19.62256 | US $1962.26 |
500+ | US $18.42815 | US $9214.07 |
1000+ | US $17.06310 | US $17063.10 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IPW60R045CPAFKSA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesAutomotive, AEC-Q101, CoolMOS™
- ECCNEAR99
- MountThrough Hole
- Height25.4mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2010
- Rise Time20ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-247-3
- Fall Time (Typ)10 ns
- Terminal FinishTin (Sn)
- Factory Lead Time18 Weeks
- Power Dissipation431W
- Terminal PositionSINGLE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time30 ns
- Vgs(th) (Max) @ Id3.5V @ 3mA
- Turn-Off Delay Time100 ns
- Qualification StatusNot Qualified
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max431W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs45m Ω @ 44A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage600V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)60A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.045Ohm
- Pulsed Drain Current-Max (IDM)230A
- Drain to Source Breakdown Voltage600V
- Input Capacitance (Ciss) (Max) @ Vds6800pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C60A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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