IRF4905LPBF
- Manufacturer’s Part#:IRF4905LPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET P-CH 55V 42A TO-262
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 36530
- Available: 408
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.29680 | US $2.30 |
10+ | US $2.06712 | US $20.67 |
30+ | US $1.60776 | US $48.23 |
100+ | US $1.32066 | US $132.07 |
500+ | US $1.26324 | US $631.62 |
1000+ | US $1.14840 | US $1148.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF4905LPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height9.652mm
- Length10.668mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTube
- Published1997
- Rise Time99ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryOther Transistors
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating-74A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Case ConnectionDRAIN
- Fall Time (Typ)64 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation200W
- Threshold Voltage4V
- Additional FeatureHIGH RELIABILITY, AVALANCHE RATED
- Number of Elements1
- Turn On Delay Time20 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC-55V
- Dual Supply Voltage55V
- Radiation HardeningNo
- Turn-Off Delay Time51 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max170W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs20m Ω @ 42A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)42A
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-74A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.02Ohm
- Pulsed Drain Current-Max (IDM)280A
- Drain to Source Breakdown Voltage-55V
- Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C42A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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