IRF630
- Manufacturer’s Part#:IRF630
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:MESH OVERLAY™ II
- ECAD Model:
- Description:MOSFET N-CH 200V 9A TO-220
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 58000
- Available: 77289
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.02600 | US $1.03 |
10+ | US $0.68400 | US $6.84 |
30+ | US $0.51300 | US $15.39 |
100+ | US $0.41040 | US $41.04 |
500+ | US $0.37620 | US $188.10 |
1000+ | US $0.34200 | US $342.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part #IRF630
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesMESH OVERLAY™ II
- ECCNEAR99
- FET TypeN-Channel
- PackagingTube
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeno
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Surface MountNO
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 250μA
- Qualification StatusCOMMERCIAL
- Number of Terminations3
- Rds On (Max) @ Id, Vgs400m Ω @ 5.4A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min200V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)9A
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)200V
- Drain-source On Resistance-Max0.4Ohm
- Pulsed Drain Current-Max (IDM)36A
- Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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