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IRF6607TR1

  • In Stock: 13651
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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IRF6607TR1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • Rise Time
    8ns
  • Vgs (Max)
    ±12V
  • Rds On Max
    3.3 mΩ
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    7
  • Package / Case
    DirectFET™ Isometric MT
  • Contact Plating
    Silver
  • Fall Time (Typ)
    13 ns
  • Input Capacitance
    6.93nF
  • Power Dissipation
    3.6W
  • Threshold Voltage
    2V
  • Turn On Delay Time
    60 ns
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    32 ns
  • Element Configuration
    Single
  • Operating Temperature
    -40°C~150°C TJ
  • Power Dissipation-Max
    3.6W Ta 42W Tc
  • Rds On (Max) @ Id, Vgs
    3.3mOhm @ 25A, 10V
  • Supplier Device Package
    DIRECTFET™ MT
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • Drain to Source Resistance
    3.3mOhm
  • Gate Charge (Qg) (Max) @ Vgs
    75nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    27A
  • Drain to Source Voltage (Vdss)
    30V
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    6930pF @ 15V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 7V
  • Current - Continuous Drain (Id) @ 25°C
    27A Ta 94A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)

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