IRF6614TR1PBF
- Manufacturer’s Part#:IRF6614TR1PBF
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- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 40V 12.7A DIRECTFET
- Datasheet:
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF6614TR1PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.95mm
- Height508μm
- Length4.826mm
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published2006
- Rise Time27ns
- Vgs (Max)±20V
- Rds On Max8.3 mΩ
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.8 V
- Part StatusObsolete
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time23 ns
- Number of Pins5
- Package / CaseDirectFET™ Isometric ST
- Fall Time (Typ)3.6 ns
- Input Capacitance2.56nF
- Power Dissipation2.1W
- Threshold Voltage1.8V
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id2.25V @ 250μA
- Dual Supply Voltage40V
- Radiation HardeningNo
- Turn-Off Delay Time18 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.1W Ta 42W Tc
- Rds On (Max) @ Id, Vgs8.3mOhm @ 12.7A, 10V
- Supplier Device PackageDIRECTFET™ ST
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Drain to Source Resistance9.9mOhm
- Gate Charge (Qg) (Max) @ Vgs29nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)10.1A
- Drain to Source Voltage (Vdss)40V
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds2560pF @ 20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C12.7A Ta 55A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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