IRF6674TR1PBF
- Manufacturer’s Part#:IRF6674TR1PBF
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- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 60V 13.4A DIRECTFET
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- In Stock: 2406
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- Available: 2406
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF6674TR1PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.05mm
- Height533.4μm
- Length6.35mm
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published2008
- Rise Time12ns
- Vgs (Max)±20V
- Rds On Max11 mΩ
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusObsolete
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time48 ns
- Number of Pins7
- Package / CaseDirectFET™ Isometric MZ
- Fall Time (Typ)8.7 ns
- Input Capacitance1.35nF
- Power Dissipation3.6W
- Number of Elements1
- Turn On Delay Time7 ns
- Vgs(th) (Max) @ Id4.9V @ 100μA
- Dual Supply Voltage60V
- Radiation HardeningNo
- Turn-Off Delay Time12 ns
- Element ConfigurationDual
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max3.6W Ta 89W Tc
- Rds On (Max) @ Id, Vgs11mOhm @ 13.4A, 10V
- Supplier Device PackageDIRECTFET™ MZ
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Drain to Source Resistance9mOhm
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)13.4A
- Drain to Source Voltage (Vdss)60V
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds1350pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C13.4A Ta 67A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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