IRF6714MTRPBF
- Manufacturer’s Part#:IRF6714MTRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 25V 29A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 224507
- Available: 118907
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.48820 | US $2.49 |
10+ | US $2.23938 | US $22.39 |
30+ | US $1.74174 | US $52.25 |
100+ | US $1.43071 | US $143.07 |
500+ | US $1.36851 | US $684.26 |
1000+ | US $1.24410 | US $1244.10 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF6714MTRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.05mm
- Height506μm
- Length6.35mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2008
- Rise Time26ns
- Vgs (Max)±20V
- Resistance2.1MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric MX
- Case ConnectionDRAIN
- Fall Time (Typ)9.6 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time12 Weeks
- Power Dissipation89W
- Terminal PositionBOTTOM
- Number of Elements1
- Turn On Delay Time18 ns
- Vgs(th) (Max) @ Id2.4V @ 100μA
- Radiation HardeningNo
- Turn-Off Delay Time13 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.8W Ta 89W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs2.1m Ω @ 29A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)29A
- Gate Charge (Qg) (Max) @ Vgs44nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)29mA
- Pulsed Drain Current-Max (IDM)234A
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds3890pF @ 13V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C29A Ta 166A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XBCC-N3
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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