IRF6718L2TRPBF
- Manufacturer’s Part#:IRF6718L2TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 25V 61A DIRECTFET L6
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 48426
- Available: 8000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.82820 | US $4.83 |
10+ | US $4.34538 | US $43.45 |
30+ | US $3.37974 | US $101.39 |
100+ | US $2.77621 | US $277.62 |
500+ | US $2.65551 | US $1327.76 |
1000+ | US $2.41410 | US $2414.10 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF6718L2TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width7.1mm
- Height508μm
- Length9.144mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2010
- Rise Time140ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins13
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric L6
- Case ConnectionDRAIN
- Fall Time (Typ)53 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time17 Weeks
- Power Dissipation4.3W
- Terminal PositionBOTTOM
- Additional FeatureULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time67 ns
- Vgs(th) (Max) @ Id2.35V @ 150μA
- Radiation HardeningNo
- Turn-Off Delay Time47 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max4.3W Ta 83W Tc
- Number of Terminations7
- Rds On (Max) @ Id, Vgs0.7m Ω @ 61A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)270A
- Gate Charge (Qg) (Max) @ Vgs96nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)530 mJ
- Continuous Drain Current (ID)61A
- Drain-source On Resistance-Max0.0007Ohm
- Pulsed Drain Current-Max (IDM)490A
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds6500pF @ 13V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C61A Ta 270A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XBCC-N7
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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