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IRF6721STRPBF

  • Available: 193709

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.35950US $2.36
10+US $1.57300US $15.73
30+US $1.17975US $35.39
100+US $0.94380US $94.38
500+US $0.86515US $432.58
1000+US $0.78650US $786.50

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IRF6721STRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.95mm
  • Height
    506μm
  • Length
    4.826mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • Rise Time
    8.9ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Number of Pins
    4
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    DirectFET™ Isometric SQ
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    5.3 ns
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    42W
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Turn On Delay Time
    7.8 ns
  • Vgs(th) (Max) @ Id
    2.4V @ 25μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    9.3 ns
  • Operating Temperature
    -40°C~150°C TJ
  • Power Dissipation-Max
    2.2W Ta 42W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    7.3m Ω @ 14A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    62 mJ
  • Continuous Drain Current (ID)
    14A
  • Drain-source On Resistance-Max
    0.0073Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1430pF @ 15V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    14A Ta 60A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XBCC-N2
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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