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IRF7316TRPBF

  • In Stock: 15300
  • Available: 211227

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.88128US $0.88
10+US $0.58752US $5.88
30+US $0.44064US $13.22
100+US $0.35251US $35.25
500+US $0.32314US $161.57
1000+US $0.29376US $293.76

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IRF7316TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.9878mm
  • Height
    1.75mm
  • Length
    4.9784mm
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • Rise Time
    13ns
  • Resistance
    58mOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    -1 V
  • Part Status
    Active
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Recovery Time
    66 ns
  • Terminal Form
    GULL WING
  • Current Rating
    -4.9A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Contact Plating
    Tin
  • Fall Time (Typ)
    32 ns
  • Base Part Number
    IRF7316PBF
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2W
  • Threshold Voltage
    -1V
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    13 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Voltage - Rated DC
    -30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    34 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    58m Ω @ 4.9A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    34nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    140 mJ
  • Continuous Drain Current (ID)
    -4.9A
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Voltage (Vdss)
    30V
  • Pulsed Drain Current-Max (IDM)
    30A
  • Drain to Source Breakdown Voltage
    -30V
  • Input Capacitance (Ciss) (Max) @ Vds
    710pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.9A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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