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IRF7328TRPBF

  • In Stock: 4000
  • Available: 149466

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.77705US $1.78
10+US $1.18470US $11.85
30+US $0.88853US $26.66
100+US $0.71082US $71.08
500+US $0.65159US $325.80
1000+US $0.59235US $592.35

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IRF7328TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.9878mm
  • Height
    1.75mm
  • Length
    4.9784mm
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • Rise Time
    15ns
  • Resistance
    21MOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    -2.5 V
  • Part Status
    Active
  • Row Spacing
    6.3 mm
  • Subcategory
    Other Transistors
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Recovery Time
    56 ns
  • Terminal Form
    GULL WING
  • Current Rating
    -8A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Contact Plating
    Tin
  • Fall Time (Typ)
    98 ns
  • Base Part Number
    IRF7328PBF
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2W
  • Threshold Voltage
    -1V
  • Additional Feature
    ULTRA LOW RESISTANCE
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    13 ns
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Voltage - Rated DC
    -30V
  • Dual Supply Voltage
    -30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    198 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    21m Ω @ 8A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    8A
  • Gate Charge (Qg) (Max) @ Vgs
    78nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    -8A
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Voltage (Vdss)
    30V
  • Drain to Source Breakdown Voltage
    -30V
  • Input Capacitance (Ciss) (Max) @ Vds
    2675pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    8A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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