IRF7328TRPBF
- Manufacturer’s Part#:IRF7328TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET 2P-CH 30V 8A 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 4000
- Available: 149466
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.77705 | US $1.78 |
10+ | US $1.18470 | US $11.85 |
30+ | US $0.88853 | US $26.66 |
100+ | US $0.71082 | US $71.08 |
500+ | US $0.65159 | US $325.80 |
1000+ | US $0.59235 | US $592.35 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF7328TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.75mm
- Length4.9784mm
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time15ns
- Resistance21MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs-2.5 V
- Part StatusActive
- Row Spacing6.3 mm
- SubcategoryOther Transistors
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time56 ns
- Terminal FormGULL WING
- Current Rating-8A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)98 ns
- Base Part NumberIRF7328PBF
- Factory Lead Time12 Weeks
- Power Dissipation2W
- Threshold Voltage-1V
- Additional FeatureULTRA LOW RESISTANCE
- Number of Channels2
- Number of Elements2
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Voltage - Rated DC-30V
- Dual Supply Voltage-30V
- Radiation HardeningNo
- Turn-Off Delay Time198 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs21m Ω @ 8A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)8A
- Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-8A
- Max Junction Temperature (Tj)150°C
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds2675pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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