IRF7402PBF
- Manufacturer’s Part#:IRF7402PBF
- Manufacturer:
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- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 20V 6.8A 8-SOIC
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- In Stock: 2983
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- Available: 2983
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF7402PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time47ns
- Vgs (Max)±12V
- Rds On Max35 mΩ
- Resistance35MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs700 mV
- Part StatusObsolete
- Row Spacing6.3 mm
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Current Rating6.8A
- Number of Pins8
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)32 ns
- Input Capacitance650pF
- Power Dissipation2.5W
- Threshold Voltage700mV
- Number of Elements1
- Turn On Delay Time5.1 ns
- Vgs(th) (Max) @ Id700mV @ 250μA
- Voltage - Rated DC20V
- Dual Supply Voltage20V
- Radiation HardeningNo
- Turn-Off Delay Time24 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta
- Rds On (Max) @ Id, Vgs35mOhm @ 4.1A, 4.5V
- Supplier Device Package8-SO
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance35mOhm
- Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)6.8A
- Drain to Source Voltage (Vdss)20V
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds650pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)2.7V 4.5V
- Current - Continuous Drain (Id) @ 25°C6.8A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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