IRF7410TRPBF
- Manufacturer’s Part#:IRF7410TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET P-CH 12V 16A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 12000
- Available: 205934
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.20510 | US $1.21 |
10+ | US $0.80340 | US $8.03 |
30+ | US $0.60255 | US $18.08 |
100+ | US $0.48204 | US $48.20 |
500+ | US $0.44187 | US $220.94 |
1000+ | US $0.40170 | US $401.70 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF7410TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.75mm
- Length4.9784mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time12ns
- Vgs (Max)±8V
- Resistance7MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs-900 mV
- Part StatusActive
- Row Spacing6.3 mm
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time145 ns
- Terminal FormGULL WING
- Current Rating-16A
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)200 ns
- Factory Lead Time12 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage-400mV
- Number of Channels1
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id900mV @ 250μA
- Voltage - Rated DC-12V
- Dual Supply Voltage-12V
- Radiation HardeningNo
- Turn-Off Delay Time271 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs7m Ω @ 16A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs91nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)-16A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)12V
- Pulsed Drain Current-Max (IDM)65A
- Drain to Source Breakdown Voltage-12V
- Input Capacitance (Ciss) (Max) @ Vds8676pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Current - Continuous Drain (Id) @ 25°C16A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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