IRF7739L2TRPBF
- Manufacturer’s Part#:IRF7739L2TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 40V DIRECTFET L8
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 24500
- Available: 34183
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $32.40000 | US $32.40 |
10+ | US $24.30000 | US $243.00 |
30+ | US $21.06000 | US $631.80 |
100+ | US $18.63000 | US $1863.00 |
500+ | US $17.49600 | US $8748.00 |
1000+ | US $16.20000 | US $16200.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF7739L2TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width7.112mm
- Height508μm
- Length9.144mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2007
- Rise Time71ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusNot For New Designs
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Number of Pins11
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric L8
- Case ConnectionDRAIN
- Fall Time (Typ)42 ns
- Terminal FinishTIN SILVER COPPER
- Power Dissipation3.8W
- Terminal PositionBOTTOM
- Number of Elements1
- Turn On Delay Time21 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time56 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 125W Tc
- Number of Terminations9
- Rds On (Max) @ Id, Vgs1m Ω @ 160A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)375A
- Gate Charge (Qg) (Max) @ Vgs330nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)270 mJ
- Continuous Drain Current (ID)46A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds11880pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C46A Ta 375A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XBCC-N9
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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