IRF8707PBF

The IRF8707PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured by Infineon Technologies, a leading semiconductor company known for its high-performance electronic components. This MOSFET is part of the IRF series and is optimized for various power management and switching applications in electronic circuits.

Key Features:

• Power MOSFET: The IRF8707PBF is a N-channel MOSFET, suitable for high-side or low-side switching applications in power electronics circuits.
• Enhancement Mode: This MOSFET operates in enhancement mode, allowing for easy control of the switching operation through gate voltage.
• Low On-Resistance: It features a low on-state resistance (RDS(on)), enabling efficient power handling and minimizing conduction losses during operation.
• High Current Handling: The MOSFET is capable of handling high drain currents, making it suitable for power switching applications in various electronic devices and systems.
• Low Gate Threshold Voltage: With a low gate threshold voltage, the MOSFET can be driven by standard logic level signals or microcontroller outputs.
• Fast Switching Speed: It offers fast switching speeds, allowing for rapid turn-on and turn-off transitions, which is essential for high-frequency switching applications.
• TO-252 Package: The IRF8707PBF is housed in a TO-252 (DPAK) package, providing excellent thermal performance and ease of mounting on PCBs.
• RoHS Compliant: The MOSFET complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental sustainability and safety in electronic products.

Applications:

• DC-DC converters and voltage regulators
• Motor control circuits
• Power supply units (PSUs)
• Battery management systems (BMS)
• LED lighting drivers
• Solenoid and relay drivers
• Load switches
• Automotive electronics
• Industrial automation systems