IRF8707TRPBF
- Manufacturer’s Part#:IRF8707TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 30V 11A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 58000
- Available: 438676
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.50400 | US $0.50 |
10+ | US $0.33600 | US $3.36 |
30+ | US $0.25200 | US $7.56 |
100+ | US $0.20160 | US $20.16 |
500+ | US $0.18480 | US $92.40 |
1000+ | US $0.16800 | US $168.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF8707TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.75mm
- Length4.9784mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2007
- Rise Time7.9ns
- Vgs (Max)±20V
- Resistance11.9MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.8 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)4.4 ns
- Factory Lead Time12 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage1.8V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time6.7 ns
- Vgs(th) (Max) @ Id2.35V @ 25μA
- Radiation HardeningNo
- Turn-Off Delay Time7.3 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs11.9m Ω @ 11A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs9.3nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)53 mJ
- Continuous Drain Current (ID)11A
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds760pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C11A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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