IRF9520NSPBF
- Manufacturer’s Part#:IRF9520NSPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET P-CH 100V 6.8A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 50000
- Available: 2347
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.94305 | US $0.94 |
10+ | US $0.62870 | US $6.29 |
30+ | US $0.47153 | US $14.15 |
100+ | US $0.37722 | US $37.72 |
500+ | US $0.34579 | US $172.89 |
1000+ | US $0.31435 | US $314.35 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF9520NSPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.826mm
- Length10.668mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTube
- Published1998
- Rise Time47ns
- Vgs (Max)±20V
- Resistance480mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs-4 V
- Part StatusObsolete
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time150 ns
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)31 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time9 Weeks
- Power Dissipation3.8W
- Threshold Voltage-4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time28 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 48W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs480m Ω @ 4A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-6.8A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)100V
- Pulsed Drain Current-Max (IDM)27A
- Drain to Source Breakdown Voltage-100V
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C6.8A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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