IRF9Z34NPBF
- Manufacturer’s Part#:IRF9Z34NPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET P-CH 55V 19A TO-220AB
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 26229
- Available: 86593
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.49500 | US $0.50 |
10+ | US $0.33000 | US $3.30 |
30+ | US $0.24750 | US $7.43 |
100+ | US $0.19800 | US $19.80 |
500+ | US $0.18150 | US $90.75 |
1000+ | US $0.16500 | US $165.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF9Z34NPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.69mm
- Height8.77mm
- Length10.5156mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTube
- Published1997
- Rise Time55ns
- Vgs (Max)±20V
- Lead Pitch2.54mm
- Resistance100mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs-4 V
- Part StatusActive
- SubcategoryOther Transistors
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Recovery Time82 ns
- Current Rating-19A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)41 ns
- Factory Lead Time12 Weeks
- Power Dissipation56W
- Threshold Voltage-4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC-55V
- Dual Supply Voltage-55V
- Radiation HardeningNo
- Turn-Off Delay Time30 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max68W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs100m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-19A
- Peak Reflow Temperature (Cel)250
- Drain to Source Voltage (Vdss)55V
- Pulsed Drain Current-Max (IDM)68A
- Drain to Source Breakdown Voltage-55V
- Input Capacitance (Ciss) (Max) @ Vds620pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C19A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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