IRFH5025TRPBF
- Manufacturer’s Part#:IRFH5025TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 250V 3.8A PQFN56
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 58915
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.04772 | US $3.05 |
10+ | US $2.74295 | US $27.43 |
30+ | US $2.13340 | US $64.00 |
100+ | US $1.75244 | US $175.24 |
500+ | US $1.67625 | US $838.13 |
1000+ | US $1.52386 | US $1523.86 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFH5025TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5mm
- Height838.2μm
- Length5.9944mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2012
- Rise Time6.3ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerVDFN
- Case ConnectionDRAIN
- Fall Time (Typ)6.1 ns
- Terminal FinishMatte Tin (Sn)
- Factory Lead Time12 Weeks
- Power Dissipation3.6W
- Terminal PositionDUAL
- Threshold Voltage5V
- Number of Elements1
- Turn On Delay Time9 ns
- Vgs(th) (Max) @ Id5V @ 150μA
- Radiation HardeningNo
- Turn-Off Delay Time17 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.6W Ta 8.3W Tc
- Number of Terminations5
- Rds On (Max) @ Id, Vgs100m Ω @ 5.7A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)320 mJ
- Continuous Drain Current (ID)32A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)46A
- Drain to Source Breakdown Voltage250V
- Input Capacitance (Ciss) (Max) @ Vds2150pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C3.8A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-N5
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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