IRFHM4231TRPBF
- Manufacturer’s Part#:IRFHM4231TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 25V 40A PQFN
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 2952
- Price: please call
- Available: 2952
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFHM4231TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5mm
- Height900μm
- Length3.3mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2013
- Rise Time28ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)5.9 ns
- Base Part NumberIRFHM4231
- Factory Lead Time13 Weeks
- Terminal PositionDUAL
- Threshold Voltage1.6V
- Number of Elements1
- Turn On Delay Time8.7 ns
- Vgs(th) (Max) @ Id2.1V @ 35μA
- Radiation HardeningNo
- Turn-Off Delay Time12 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.7W Ta 29W Tc
- Number of Terminations5
- Rds On (Max) @ Id, Vgs3.4m Ω @ 30A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min25V
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)42 mJ
- Continuous Drain Current (ID)22A
- Drain to Source Voltage (Vdss)25V
- Drain-source On Resistance-Max0.0046Ohm
- Input Capacitance (Ciss) (Max) @ Vds1270pF @ 13V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C40A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-30 CodeS-PDSO-N5
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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