IRFHM830DTRPBF
- Manufacturer’s Part#:IRFHM830DTRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 30V 20A PQFN
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 8870
- Price: please call
- Available: 8870
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFHM830DTRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.3mm
- Height990.6μm
- Length3.2766mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2010
- Rise Time20ns
- Vgs (Max)±20V
- Resistance7.1MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.8 V
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-VQFN Exposed Pad
- Case ConnectionDRAIN
- Fall Time (Typ)6.7 ns
- Factory Lead Time14 Weeks
- Power Dissipation2.8W
- Terminal PositionDUAL
- Threshold Voltage1.8V
- Number of Elements1
- Turn On Delay Time9.8 ns
- Vgs(th) (Max) @ Id2.35V @ 50μA
- Radiation HardeningNo
- Turn-Off Delay Time9.1 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.8W Ta 37W Tc
- Number of Terminations5
- Rds On (Max) @ Id, Vgs4.3m Ω @ 20A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)40A
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)20A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds1797pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C20A Ta 40A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-30 CodeS-PDSO-N5
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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