EnglishEnglish
My Account

Hello welcome to Chipsmall!

  • My ProfileMy Profile
  • Address ManagementAddress Management
  • Change PasswordChange Password
  • Order Status & HistoryOrder Status & History
Cart
RFQ List
All PRODUCTS
Image is for your reference only, please check specifications for details
iconCompare
icon

IRFHM8326TRPBF

  • In Stock: 346323
  • Available: 346323

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.69975US $0.70
10+US $0.46650US $4.67
30+US $0.34988US $10.50
100+US $0.27990US $27.99
500+US $0.25658US $128.29
1000+US $0.23325US $233.25

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • esd
  • as
  • iso14001
  • iso9001
  • D&B

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IRFHM8326TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Cut Tape (CT)
  • Published
    2013
  • Rise Time
    35ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    FLAT
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerTDFN
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    12 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2.8W
  • Terminal Position
    DUAL
  • Threshold Voltage
    1.7V
  • Number of Elements
    1
  • Turn On Delay Time
    12 ns
  • Vgs(th) (Max) @ Id
    2.2V @ 50μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    18 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.8W Ta 37W Tc
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    4.7m Ω @ 20A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    70A
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    19A
  • Drain-source On Resistance-Max
    0.0067Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    2496pF @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    19A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    S-PDSO-F5
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

Index:

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance