IRFR13N20DTR
- Manufacturer’s Part#:IRFR13N20DTR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 200V 13A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3369
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- Available: 3369
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFR13N20DTR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- Time@Peak Reflow Temperature-Max (s)30
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Part StatusObsolete
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Power
- Surface MountYES
- Number of Terminations2
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Published2000
- Case ConnectionDRAIN
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationSWITCHING
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max110W Tc
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)13A
- Drain-source On Resistance-Max0.235Ohm
- Pulsed Drain Current-Max (IDM)52A
- DS Breakdown Voltage-Min200V
- Avalanche Energy Rating (Eas)130 mJ
- Drain to Source Voltage (Vdss)200V
- FET TypeN-Channel
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds830pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
- Vgs (Max)±30V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Drive Voltage (Max Rds On,Min Rds On)10V
- Rds On (Max) @ Id, Vgs235m Ω @ 8A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusNon-RoHS Compliant
- JESD-609 Codee3
- JESD-30 CodeR-PSSO-G2
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