IRFR3607TRPBF
- Manufacturer’s Part#:IRFR3607TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 75V 56A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 20000
- Available: 118470
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.09080 | US $1.09 |
10+ | US $0.72720 | US $7.27 |
30+ | US $0.54540 | US $16.36 |
100+ | US $0.43632 | US $43.63 |
500+ | US $0.39996 | US $199.98 |
1000+ | US $0.36360 | US $363.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFR3607TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.3876mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2010
- Rise Time110ns
- Vgs (Max)±20V
- Resistance9MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)96 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation140W
- Terminal PositionSINGLE
- Threshold Voltage2V
- Number of Elements1
- Turn On Delay Time16 ns
- Vgs(th) (Max) @ Id4V @ 100μA
- Radiation HardeningNo
- Turn-Off Delay Time43 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max140W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs9m Ω @ 46A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)56A
- Gate Charge (Qg) (Max) @ Vgs84nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)80mA
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage75V
- Input Capacitance (Ciss) (Max) @ Vds3070pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C56A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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