IRFS23N20DTRRP
- Manufacturer’s Part#:IRFS23N20DTRRP
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 200V 24A D2PAK
- Datasheet:
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- In Stock: 2857
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- Available: 2857
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFS23N20DTRRP
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.826mm
- Length10.668mm
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published2004
- Rise Time32ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusDiscontinued
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)16 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Power Dissipation170W
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time26 ns
- Element ConfigurationSingle
- Power Dissipation-Max3.8W Ta 170W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs100m Ω @ 14A, 10V
- Transistor ApplicationSWITCHING
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Reflow Temperature-Max (s)30
- Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)250 mJ
- Continuous Drain Current (ID)24A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)96A
- Drain to Source Breakdown Voltage200V
- Input Capacitance (Ciss) (Max) @ Vds1960pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C24A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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