IRFS4227PBF
- Manufacturer’s Part#:IRFS4227PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 200V 62A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 8757
- Available: 8757
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.51120 | US $3.51 |
10+ | US $3.16008 | US $31.60 |
30+ | US $2.45784 | US $73.74 |
100+ | US $2.01894 | US $201.89 |
500+ | US $1.93116 | US $965.58 |
1000+ | US $1.75560 | US $1755.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFS4227PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.826mm
- Length10.67mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2005
- Rise Time20ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs5 V
- Part StatusDiscontinued
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time150 ns
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)31 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Power Dissipation330W
- Threshold Voltage5V
- Number of Elements1
- Turn On Delay Time33 ns
- Vgs(th) (Max) @ Id5V @ 250μA
- Dual Supply Voltage240V
- Radiation HardeningNo
- Turn-Off Delay Time21 ns
- Element ConfigurationSingle
- Operating Temperature-40°C~175°C TJ
- Power Dissipation-Max330W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs26m Ω @ 46A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Continuous Drain Current (ID)62A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.026Ohm
- Pulsed Drain Current-Max (IDM)260A
- Drain to Source Breakdown Voltage200V
- Input Capacitance (Ciss) (Max) @ Vds4600pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C62A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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