IRFS4310TRLPBF
- Manufacturer’s Part#:IRFS4310TRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 100V 130A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 80000
- Available: 39738
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $30.74000 | US $30.74 |
10+ | US $23.05500 | US $230.55 |
30+ | US $19.98100 | US $599.43 |
100+ | US $17.67550 | US $1767.55 |
500+ | US $16.59960 | US $8299.80 |
1000+ | US $15.37000 | US $15370.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFS4310TRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.826mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2006
- Rise Time110ns
- Vgs (Max)±20V
- Resistance7MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time68 ns
- Terminal FormGULL WING
- Current Rating140A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)78 ns
- Factory Lead Time12 Weeks
- Power Dissipation300W
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time26 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time68 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max300W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs7m Ω @ 75A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)75A
- Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)980 mJ
- Continuous Drain Current (ID)140A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)550A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds7670pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C130A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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