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IRFS4410TRLPBF

  • In Stock: 50732
  • Available: 1600

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.68676US $3.69
10+US $3.31808US $33.18
30+US $2.58073US $77.42
100+US $2.11989US $211.99
500+US $2.02772US $1013.86
1000+US $1.84338US $1843.38

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IRFS4410TRLPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    9.65mm
  • Height
    4.826mm
  • Length
    10.668mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • Rise Time
    80ns
  • Vgs (Max)
    ±20V
  • Resistance
    10MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Active
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    96A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    50 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    200W
  • Threshold Voltage
    4V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    24 ns
  • Vgs(th) (Max) @ Id
    4V @ 150μA
  • Voltage - Rated DC
    100V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    55 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    200W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    10m Ω @ 58A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    75A
  • Gate Charge (Qg) (Max) @ Vgs
    180nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    220 mJ
  • Continuous Drain Current (ID)
    96A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    5150pF @ 50V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    88A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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