IRFU3806PBF
- Manufacturer’s Part#:IRFU3806PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 60V 43A I-PAK
- Datasheet:
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- In Stock: 3055
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- Available: 3055
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFU3806PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width2.39mm
- Height6.22mm
- Length6.73mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2008
- Rise Time40ns
- Vgs (Max)±20V
- Resistance15.8MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Recovery Time33 ns
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Fall Time (Typ)47 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Power Dissipation71W
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time6.3 ns
- Vgs(th) (Max) @ Id4V @ 50μA
- Radiation HardeningNo
- Turn-Off Delay Time49 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max71W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs15.8m Ω @ 25A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)43A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)170A
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds1150pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C43A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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