IRFZ44ZLPBF
- Manufacturer’s Part#:IRFZ44ZLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:TO262 Pre-ordered transistors RoHS
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 155345
- Available: 2193
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.20710 | US $2.21 |
10+ | US $1.47140 | US $14.71 |
30+ | US $1.10355 | US $33.11 |
100+ | US $0.88284 | US $88.28 |
500+ | US $0.80927 | US $404.64 |
1000+ | US $0.73570 | US $735.70 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFZ44ZLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height4.83mm
- Length10.6426mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2010
- Rise Time68ns
- Vgs (Max)±20V
- Resistance13.9MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating51A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Case ConnectionDRAIN
- Fall Time (Typ)41 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation80W
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC55V
- Radiation HardeningNo
- Turn-Off Delay Time33 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max80W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs13.9m Ω @ 31A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)86 mJ
- Continuous Drain Current (ID)51A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)200A
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds1420pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C51A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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