IRFZ48VPBF

The IRFZ48VPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, making it suitable for a variety of uses in power management, motor control, and other electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: Typically available in a TO-220 package, which allows for efficient heat dissipation and easy mounting on heat sinks.
3. Voltage Rating: The IRFZ48VPBF has a maximum drain-source voltage (V_DS) of 55V, making it suitable for applications that require moderate voltage handling.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 49A at a temperature of 25°C, which allows it to manage significant power loads.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.035 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V to 4V, which means it begins to conduct at relatively low gate voltages, making it suitable for logic-level applications.
7. Switching Speed: The IRFZ48VPBF features fast switching capabilities, which is essential for applications that require rapid on/off cycling.
8. Thermal Resistance: The device has a low thermal resistance, allowing it to operate efficiently at higher temperatures without overheating.
9. Applications: Commonly used in power supplies, DC-DC converters, motor drivers, and other applications where efficient power management is critical.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 94W, depending on the thermal management.
• Body Diode Characteristics: The IRFZ48VPBF includes an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications.

Environmental Considerations:

• RoHS Compliance: The IRFZ48VPBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it is free from certain hazardous materials.
• Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

Conclusion:

The IRFZ48VPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that is well-suited for high-power applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers in the field of power electronics.