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IRG4BC40W-SPBF

  • In Stock: 22533
  • Available: 685

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.77760US $3.78
10+US $3.39984US $34.00
30+US $2.64432US $79.33
100+US $2.17212US $217.21
500+US $2.07768US $1038.84
1000+US $1.88880US $1888.80

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IRG4BC40W-SPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount, Through Hole
  • Width
    4.826mm
  • Height
    4.83mm
  • Length
    10.668mm
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    23ns
  • Input Type
    Standard
  • Gate Charge
    98nC
  • Part Status
    Last Time Buy
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    48 ns
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    40A
  • Number of Pins
    3
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Test Condition
    480V, 20A, 10 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Switching Energy
    110μJ (on), 230μJ (off)
  • Factory Lead Time
    8 Weeks
  • Power Dissipation
    160W
  • Terminal Position
    SINGLE
  • Additional Feature
    LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    110ns
  • Number of Elements
    1
  • Turn On Delay Time
    27 ns
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    27ns/100ns
  • Turn-Off Delay Time
    100 ns
  • Element Configuration
    Dual
  • Max Collector Current
    40A
  • Max Power Dissipation
    160W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    2
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 20A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    294 ns
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Peak Reflow Temperature (Cel)
    260
  • Collector Emitter Voltage (VCEO)
    2.5V
  • Current - Collector Pulsed (Icm)
    160A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.05V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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