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IRL2703PBF

  • In Stock: 5000
  • Available: 89924

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.06965US $1.07
10+US $0.71310US $7.13
30+US $0.53482US $16.04
100+US $0.42786US $42.79
500+US $0.39221US $196.11
1000+US $0.35655US $356.55

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IRL2703PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.69mm
  • Height
    8.77mm
  • Length
    10.5156mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    140ns
  • Vgs (Max)
    ±16V
  • Resistance
    40MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    1 V
  • Part Status
    Not For New Designs
  • Subcategory
    FET General Purpose Power
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Recovery Time
    97 ns
  • Current Rating
    24A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    20 ns
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    45W
  • Threshold Voltage
    1V
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
  • Number of Elements
    1
  • Turn On Delay Time
    8.5 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Voltage - Rated DC
    30V
  • Dual Supply Voltage
    30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    12 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    45W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 14A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    16V
  • Avalanche Energy Rating (Eas)
    77 mJ
  • Continuous Drain Current (ID)
    24A
  • Peak Reflow Temperature (Cel)
    250
  • Pulsed Drain Current-Max (IDM)
    96A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    450pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    24A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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