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IRLR3717PBF

  • In Stock: 3824
  • Available: 3824

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.77546US $1.78
10+US $1.18364US $11.84
30+US $0.88773US $26.63
100+US $0.71018US $71.02
500+US $0.65100US $325.50
1000+US $0.59182US $591.82

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IRLR3717PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.22mm
  • Height
    2.26mm
  • Length
    6.7056mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    14ns
  • Vgs (Max)
    ±20V
  • Resistance
    4MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Discontinued
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-252AA
  • Mounting Type
    Surface Mount
  • Recovery Time
    33 ns
  • Terminal Form
    GULL WING
  • Current Rating
    120A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    16 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    15 Weeks
  • Power Dissipation
    89W
  • Threshold Voltage
    2V
  • Number of Elements
    1
  • Turn On Delay Time
    14 ns
  • Vgs(th) (Max) @ Id
    2.45V @ 250μA
  • Voltage - Rated DC
    20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    5.8 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    89W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    4m Ω @ 15A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    460 mJ
  • Continuous Drain Current (ID)
    120A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    460A
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance (Ciss) (Max) @ Vds
    2830pF @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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