IRLR8256TRPBF
- Manufacturer’s Part#:IRLR8256TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 25V 81A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 34
- Available: 4000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.38500 | US $2.39 |
10+ | US $1.59000 | US $15.90 |
30+ | US $1.19250 | US $35.78 |
100+ | US $0.95400 | US $95.40 |
500+ | US $0.87450 | US $437.25 |
1000+ | US $0.79500 | US $795.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRLR8256TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.3876mm
- Length6.7056mm
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published2007
- Rise Time46ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)8.5 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation63W
- Terminal PositionSINGLE
- Number of Elements1
- Turn On Delay Time9.7 ns
- Vgs(th) (Max) @ Id2.35V @ 25μA
- Radiation HardeningNo
- Turn-Off Delay Time12 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max63W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs5.7m Ω @ 25A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)86 mJ
- Continuous Drain Current (ID)81A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0057Ohm
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds1470pF @ 13V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C81A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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