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IRS2336DSTRPBF
- Manufacturer’s Part#:IRS2336DSTRPBF
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- Description:IC GATE DRIVER HV 3PHASE 28-SOIC
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- Quantity:RFQAdd to RFQ List
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- In Stock: 31915
- Available: 30015
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $5.15508 | US $5.16 |
| 10+ | US $4.63957 | US $46.40 |
| 30+ | US $3.60856 | US $108.26 |
| 100+ | US $2.96417 | US $296.42 |
| 500+ | US $2.83529 | US $1417.65 |
| 1000+ | US $2.57754 | US $2577.54 |
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- Description
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The IRS2181/IRS21814 are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logi c.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Thefloating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Features · Fl oati ng channel desi gned for bootstrap operati on · Fully operational to +600V · Tolerant to negative transient voltage, dV/dt immune · Gate drive supply range from 10 V to 20V · Undervoltage lockout for both channels · 3.3 V and 5 V input logic compatible · Matched propagation delay for both channels · L ogic and power ground +/- 5 V offset · L ower di/dt gate driver for better noise immunity · Output source/sink current capability 1.4 A/1.8A · RoHS compliant
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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