IS42S16400F-5TL-TR

OVERVIEW ISSI's 64Mb Synchronous DRAM is organized as 1,048,576bits x 16-bit x 4-bank for improved performance.
The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
FEATURES
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• Auto refresh (CBR)
• 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge commandOPTIONS
• Package: 54-pin TSOP II 54-ball FBGA (8mm x 8mm)
• Operating Temperature Range Commercial (0℃ to +70℃) Industrial (-40℃ to +85℃) Automotive Grade A1 (-40℃ to +85℃) Automotive Grade A2 (-40℃ to +105℃)