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IXFB50N80Q2

  • Available: 100

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $39.37440US $39.37
10+US $29.53080US $295.31
30+US $25.59336US $767.80
100+US $22.64028US $2264.03
500+US $21.26218US $10631.09
1000+US $19.68720US $19687.20

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    IXYS
  • Manufacturer's Part #
    IXFB50N80Q2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HiPerFET™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5.31mm
  • Height
    26.59mm
  • Length
    20.29mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    2010
  • Rise Time
    25ns
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    264
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-264-3, TO-264AA
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    13 ns
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Factory Lead Time
    26 Weeks
  • Power Dissipation
    890W
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Turn On Delay Time
    26 ns
  • Vgs(th) (Max) @ Id
    5.5V @ 8mA
  • Turn-Off Delay Time
    60 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    1135W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    160m Ω @ 500mA, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    260nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Avalanche Energy Rating (Eas)
    5000 mJ
  • Continuous Drain Current (ID)
    50A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Pulsed Drain Current-Max (IDM)
    200A
  • Drain to Source Breakdown Voltage
    800V
  • Input Capacitance (Ciss) (Max) @ Vds
    7200pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    50A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSIP-T3
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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