IXFB70N60Q2
- Manufacturer’s Part#:IXFB70N60Q2
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HiPerFET™
- ECAD Model:
- Description:MOSFET N-CH 600V 70A PLUS264
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 2773
- Available: 292
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $58.60540 | US $58.61 |
10+ | US $43.95405 | US $439.54 |
30+ | US $38.09351 | US $1142.81 |
100+ | US $33.69810 | US $3369.81 |
500+ | US $31.64692 | US $15823.46 |
1000+ | US $29.30270 | US $29302.70 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerIXYS
- Manufacturer's Part #IXFB70N60Q2
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHiPerFET™
- ECCNEAR99
- MountThrough Hole
- Width5.31mm
- Height26.59mm
- Length20.29mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2010
- Rise Time25ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusNot For New Designs
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Number of Pins264
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-264-3, TO-264AA
- Case ConnectionDRAIN
- Fall Time (Typ)12 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time8 Weeks
- Power Dissipation890W
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time26 ns
- Vgs(th) (Max) @ Id5.5V @ 8mA
- Turn-Off Delay Time60 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max890W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs88m Ω @ 35A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs265nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)5 mJ
- Continuous Drain Current (ID)70A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.088Ohm
- Pulsed Drain Current-Max (IDM)280A
- Drain to Source Breakdown Voltage600V
- Input Capacitance (Ciss) (Max) @ Vds12000pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C70A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSIP-T3
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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