IXFH6N100
- Manufacturer’s Part#:IXFH6N100
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HiPerFET™
- ECAD Model:
- Description:MOSFET N-CH 1KV 6A TO-247AD
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 300
- Available: 5109
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $20.45520 | US $20.46 |
10+ | US $15.34140 | US $153.41 |
30+ | US $13.29588 | US $398.88 |
100+ | US $11.76174 | US $1176.17 |
500+ | US $11.04581 | US $5522.91 |
1000+ | US $10.22760 | US $10227.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerIXYS
- Manufacturer's Part #IXFH6N100
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHiPerFET™
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2000
- Rise Time40ns
- Vgs (Max)±20V
- Resistance2Ohm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4.5 V
- Part StatusNot For New Designs
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Recovery Time250 ns
- Current Rating6A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-247-3
- Case ConnectionDRAIN
- Fall Time (Typ)60 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time8 Weeks
- Power Dissipation180W
- Threshold Voltage4.5V
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Vgs(th) (Max) @ Id4.5V @ 2.5mA
- Voltage - Rated DC1kV
- Dual Supply Voltage1kV
- Turn-Off Delay Time100 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max180W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs2 Ω @ 500mA, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6A
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)6A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)1000V
- Pulsed Drain Current-Max (IDM)24A
- Drain to Source Breakdown Voltage1kV
- Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C6A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)Not Applicable
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