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IXFN48N50

  • In Stock: 2000
  • Available: 6

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $75.00000US $75.00
10+US $56.25000US $562.50
30+US $48.75000US $1462.50
100+US $43.12500US $4312.50
500+US $40.50000US $20250.00
1000+US $37.50000US $37500.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    IXYS
  • Manufacturer's Part #
    IXFN48N50
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HiPerFET™
  • ECCN
    EAR99
  • Mount
    Chassis Mount, Screw
  • FET Type
    N-Channel
  • HTS Code
    8541.29.00.95
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    4
  • Published
    2002
  • Rise Time
    60ns
  • Vgs (Max)
    ±20V
  • Resistance
    100mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Not For New Designs
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • Current Rating
    48A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SOT-227-4, miniBLOC
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    30 ns
  • Terminal Finish
    Nickel (Ni)
  • Factory Lead Time
    8 Weeks
  • Power Dissipation
    520W
  • Terminal Position
    UPPER
  • Threshold Voltage
    4V
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    4V @ 8mA
  • Voltage - Rated DC
    500V
  • Dual Supply Voltage
    500V
  • Turn-Off Delay Time
    100 ns
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    520W Tc
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 500mA, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    270nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    48A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Pulsed Drain Current-Max (IDM)
    192A
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance (Ciss) (Max) @ Vds
    8400pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    48A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PUFM-X4
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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